收藏本站
MTP10N10EL
Preferred Device
Power MOSFET
10 A, 100 V, Logic Level, N?Channel TO?220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain?to?source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
? Avalanche Energy Specified
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
http://onsemi.com
10 A, 100 V
R DS(on) = 0.22 W
N?Channel
D
?
?
?
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Pb?Free Package is Available
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
MARKING DIAGRAM
Rating
Symbol
Value
Unit
& PIN ASSIGNMENT
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 M W )
V DSS
V DGR
100
100
Vdc
Vdc
4
4
Drain
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p ≤ 10 ms)
V GS
V GSM
± 15
± 20
Vdc
Vpk
Drain Current
? Continuous @ T C = 25 ° C
? Continuous @ T C = 100 ° C
? Single Pulse (t p ≤ 10 m s)
I D
I D
I DM
10
6.0
35
Adc
Apk
1
2
3
TO?220AB
CASE 221A
STYLE 5
MTP10N10EL
LLYWW
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T C = 25 ° C
(Note 1)
Operating and Storage Temperature
Range
P D
T J , T stg
40
0.32
1.75
?55 to
150
Watts
W/ ° C
Watts
° C
MTP10N10EL
1
Gate
2
Drain
= Device Code
3
Source
LL
= Location Code
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
50
mJ
Y
WW
= Year
= Work Week
(V DD = 25 Vdc, V GS = 5.0 Vdc, Peak
I L = 10 Adc, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction?to?Case °
R q JC
3.13
° C/W
ORDERING INFORMATION
Device Package Shipping
? Junction?to?Ambient
? Junction?to?Ambient (Note 1)
R q JA
R q JA
100
71.4
MTP10N10EL
TO?220AB
50 Units/Rail
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 secs
T L
260
° C
MTP10N10ELG
TO?220AB
(Pb?Free)
50 Units/Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
*For additional information on our Pb?Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2005
March, 2005 ? Rev. 4
1
Publication Order Number:
MTP10N10EL/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MTP12P10G MOSFET P-CH 100V 12A TO220AB
MTP23P06VG MOSFET P-CH 60V 23A TO220AB
MTP2955V MOSFET P-CH 60V 12A TO-220AB
MTP2P50E MOSFET P-CH 500V 2A TO-220AB
MTP3055VL MOSFET N-CH 60V 12A TO-220AB
MTP3055VL MOSFET N-CH 60V 12A TO-220
MTP3055V MOSFET N-CH 60V 12A TO-220AB
MTP36N06V MOSFET N-CH 60V 32A TO-220AB
相关代理商/技术参数
MTP10N10M 制造商:Motorola Inc 功能描述:
MTP10N15 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N25 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP10N40 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
MTP10N40E 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTP1149 功能描述:触觉开关 SW TACT SPST 0.05A 12VDC RoHS:否 制造商:C&K Components 工作力:2 N 执行器:Round 电流额定值:50 mA 电压额定值 DC:32 V 电压额定值 AC: 功率额定值:1 VA 接地端子:Yes 触点形式:SPST-NO 开关功能: 安装风格:SMD/SMT 安装方向:Right 晶体管管座高度: 颜色: 照明:Not Illuminated 照明颜色: 封装:
MTP127M030P1C 制造商:MALLOR 功能描述:
MTP12N05E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR